【作者】 王胜利； 袁育杰； 刘玉岭；

【Author】 Wang Shengli Yuan Yujie Liu Yuling(Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,China)

【机构】 河北工业大学微电子研究所；

【摘要】 为了提高铜布线化学机械抛光效果,对其抛光工艺进行了研究。采用二氧化硅胶体碱性抛光液对铜布线进行抛光,讨论了抛光压力、温度、氧化剂含量、流量等对抛光速率的影响。结果表明,不降低表面质量,在抛光压力为0.15 MPa时,抛光片的抛光效果和抛光速率达到最佳;在20~30℃时,能较好地平衡化学作用与机械作用;抛光液流量在200 mL/m in时,既节约了生产成本又能提高效率;当氧化剂体积分数在2%~3%时,抛光液既保持了较好的稳定性,又能保证氧化能力,从而提高抛光速率。更多还原

【Abstract】 The copper polishing technology was studied to improve the effect of the chemical mechanical polishing.The SiO₂ abrasives was used to polish the copper.The influence of the pressure,polishing temperature,oxidant concentration and slurry flow rate on polishing rate was discussed.The results indicate that the surface and the polishing rate can be the best when the polishing pressure is 0.15 MPa;when the temperature is 20 to 30 ℃,it can balance the action of chemical and mechanism and get the smooth surface;when the slurry flow rate is 200 mL/min,it can save the cost and improve the efficiency;when the oxidant concentration is 2%³%,the slurry can keep the good stability and oxidant ability,which can improve the polishing rate.更多还原