【作者】 李旭； 严学俭； 邱伟民； 张群； 王伟军； 华中一；

【Author】 LI Xu YAN Xue-jian~* QIU Wei-min ZHANG Qun WANG Wei-jun HUA Zhong-yi (Department of Materials Science of Fudan University,Shanghai 200433,China)

【机构】 复旦大学材料科学系；

【摘要】 利用 STM 对金属有机络合物电双稳材料 Ag-TCNQ 薄膜进行电学性质的表征与改性,在针尖强电场的作用下,当电压达到某一阈值后薄膜从高阻态跃迁至低阻态,这两种高低阻态分别定义为一个存储单元的“0”与“1”状态。本文考虑到在 STM 的常规恒流工作模式下,针尖与样品之间的隧道结对于电学性质的表征与改性具有影响。为此测量隧道电流 I_?对隧道结宽度 Z 的依赖关系 I-Z 曲线,从而确定针尖刚好接触样品的接触点,利用 STM 进行了针尖与样品“接触式”的电学测量和表面电学改性研究,并与常规工作模式进行了比较。更多还原

【Abstract】 Characterization and surface modification of electric property have been carried out on the organmetallic complex Ag-TCNQ thin film by scanning tunneling microscope (STM).The resistance of an organmetallic complex Ag-TCNQ thin film will be changed from a high resistance state to a low resistance state when the bias voltage between the tip of STM and the bottom electrode was in excess of a certain threshold voltage.The two states can be defined as“0”and“1”of a memory unit respectively.In order to avoid the effect of tunnel junction between the tip and the sample,which isn’t the intrinsic property of the material,the I-Z curve was measured and the point at which the tip just contacts with the surface of the Ag-TCNQ thin film was found.Then a test and a modification in so-called “contact” mode of STM have been carried out,and the result was compared with that in the conventional mode.更多还原