【作者】 刘虹雯； 郭海明； 王业亮； 高鸿钧； 刘盛； Kamgar A； Gleskova H； Wagner S；

【Author】 LIU Hong-wen~1 GUO Hai-ming~1 WANG Ye-liang~1 GAO Hong-jun~1 LIU Sheng~2 KAMGAR A~2 GLESKOVA H~3 WAGNER S~3 1 Nanoscale Physics and Devices Laboratory,Institute of Physics,Chinese Academy of Sciences,Beijing 100080; 2 Department of Physics,New Jersey hrstitute of Technology,Newark,New Jersey 07102,USA; 3 Department of Electrical Engineering,Princeton University,Princeton,New Jersey 08544,USA

【机构】 中国科学院物理研究所纳米物理与器件实验室； Department of Physics,New Jersey hrstitute of Technology,Newark,New Jersey 07102,USA； Department of Electrical Engineering,Princeton University,Princeton,New Jersey 08544,USA；

【摘要】 本文研究了在柔性塑料衬底上的均匀的无定形 Si 和 SiN_x 薄膜的裂化规律。结果表明,在单轴向拉力应变下,虽然衬底仍保持完整,但是半导体薄膜破裂为直的并行的阵列。当应变大于一个临界值后,裂纹的密度成线性增长。用原子力显微镜对裂纹的宽度和深度进行了表征和分析。更多还原

【Abstract】 Cracking rules of homogeneous,amorphous Si and SiN thin film on compliant,plastic substrates have been studied.The results showed that under uniaxial tensile strain,the film cracks were in an array of essentially straight and parallel lines,while the substrates remained intact.When the strain was larger than a critical value,the crack density increased linearly.The topographies of the cracks have been investigated and analyzed by an atomic force microscope.更多还原