【作者】 曾一平； 孔梅影； 王晓亮； 朱世荣； 李灵霄； 李晋闽；

【Author】 Y.P.Zeng M.Y.Kong X.L.Wang S.R.Zhu L.X.Li J.M.Li(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)

【机构】 中国科学院半导体研究所；

【摘要】 采用分子束外延(MBE)技术,研制生长了 InGaAs/GaAs 应变单量子阱激光器材料,并研究了生长温度及界面停顿生长对激光器性能的影响。结果表明,较高的 InGaAs 生长温度和尽可能短的生长停顿时间,将有利于降低激光器的阅值电流。所外延的激光器材料在250μm×500μm 宽接触、脉冲工作方式下测量的阀电流密度的典型值为160mA/cm~2。用湿法腐蚀制作的 4μm 条宽的脊型波导激光器,阀值电流为16hA,外微分量子效率为0．4mw/mA,激射波长为976±2nm,线性输出功率为 100mW。更多还原

【Abstract】 The straired layer In_xGa_1-xAs single quantum well lasers with a gade-index-separate-confinement heterostructure were grown by molecular beam epitaxy（MBE）.The effects of the growth temperature and growth interruption at the interrfaces on the threshold current density of the laser diodes were investigated.The results show that higher growth temperature and shorter trowth interruption time can reduce the threshold current density of the laser diodes.The broad area lasers（250μm×500μn）were fabricated,and tested under pulsed operation.Their threshold current densities were 160A/cm².Ridge waveguide diodes with 4μm wide waveguide were also fabricated by selective wet chemical etching. The threshold current was 16mA.The diodes have an external quantum efficiency of 0.40mW/mA,being single mode with a peak wavelength at 976±2nm.The output power without coating of the facets is 100mW.更多还原