【作者】 石新红； 曹为民； 印仁和；

【Author】 SHI Xin-hong CAO Wei-min YIN Ren-he

【机构】 上海大学理学院化学系；

【摘要】 以单晶 Si(111)为基底使用双槽法电结晶制备 Co/Pd 纳米多层膜,确定了工艺条件,通过电位阶跃法探讨了镀层晶体成核机理,Co、Pd 电结晶初期均为三维瞬时成核过程,使用石英晶体微天平(EQCM)精确测定沉积过程中膜的质量.X 射线衍射(XRD)研究显示:多层膜具有较好的晶格取向,出现 Co/Pd(111)的合金峰,并用物性测量系统(PPMS) 测试了 Co/Pd 多层膜的磁性能,磁滞回线表明:矫顽力随着磁性层厚度的减小而增大,可达到1130 Oe 左右。更多还原

【Abstract】 Multilayered Co/Pd nanostructure films are deposited on monocrystalline silicon(111)by using double-bath method and the technological conditions are determined.The mechanism of the growth kinetics for Co and Pd layers have been studied,It is showed that the growth kinetics for Co and Pd ate consistent with progressive nucleation.The mass change of layers are exactly measured by EQCM.XRD results suggest that the multilayer have good crystal lattice,and alloy-intermediate of Co and Pd are also found.In addition,hysteresis loops are measured by PPMS at room temperature.The result showed that:with decrease of Co thickness,coercive force was increased and which up to 1130 Oe.更多还原