【作者】 简余良； 孙彤； 邵力为； 孙平；

【Author】 Yuliang Jian. Tong Sun, Liwei Shao, and Ping Sun, (Department of Electronic Engineering, Southeast University, Nanjing 210096)

【机构】 东南大学电子工程系；

【摘要】 本文介绍了在有PbO和无PbO气氛中分别对沉积在玻璃和硅基片上的IT0薄膜电极进行不同温度热处理,薄膜电极的导电性能所受的影响。在无PbO气氛的情况下ITO薄膜的电阻在不同的热处理温度下没有太大变化:而在有PbO的气氛下发现当超过某一热处理温度后,玻璃基片及硅基片上ITO薄膜的电阻均会发生很大的变化;对于硅基片,当热处理温度低于600℃时,ITO薄膜的电阻变化较小,但是,经650℃热处理后的由100Ω/口变成了50KΩ/口。但研究发现不同质量的ITO薄膜,在同一温度热处理条件下,电阻变化有很大不同。更多还原

【Abstract】 In this the paper, it was investigated respectively that the variations of the conductivity of Indium Tin Oxide (IT ) films deposited on Si substrates and glass substrates after annealing respectively in air and in PbO atmosphere. When the temperature of annealing was higher over a certain temperature, the large increasing of conductivity of L) films could occur both in the ITO films deposited on glass and Si substrates. For the ITO films deposited on Si substrates, when the temperature of annealing was lower than 600 ℃ the variation of the conductivity is small, but the conductivity increased from 100Ω/□ to 50KΩ/□ after annealed at 650℃,. For the different kinds of ITO films, which were deposited on Si substrates using different ITO targets, the variations of the conductivity is different after annealing in PbO atmosphere.更多还原