【作者】 朱秀榕； 赖珍荃； 刘倩； 范定寰； 李海翼；

【Author】 ZHU Xiu-rong, LAI Zhen-quan,Liu Qian, Fang Ding-huan,Li Hai-yi Department of Physics, Nanchang University, Nanchang 330031, P. R. China

【机构】 南昌大学物理学系；

【摘要】 采用直流反应磁控溅射法,在Si(111)基底上制备氮化钛(TiNx)薄膜。研究了溅射沉积过程中基底温度对TiNx薄膜结构及性能的影响。研究发现:在其它工艺参数不变的情况下,改变基底温度,薄膜的主要成分是立方相TiN,240℃附近是TiN薄膜择优取向由(111)向(200)转变的临界点。随着基底温度升高,薄膜表面粗糙度先变小后变大,温度达到330℃时薄膜粗糙度存在最小值。薄膜具有较好的光学反射率,平均反射率最高可达77.6%。更多还原

【Abstract】 Titanium nitride (TiNx) thin films were prepared on Si(111) substrates by DC reactive magnetron sputtering. The influence of substrate temperature on the microstructure, the surface topography of TiNx thin films were investigated. It is shown that the main component of the thin films is cubic TiN with (111) preferred orientation when the substrate temperature is below 240℃, there is a transition of the preferred orientation from (111) to (200) when the substrate temperature increase. The surface roughness of TiNx thin films exist a minimal value when the substrate temperature is 330℃. The highest optic reflectance is 77.6 % when the substrate temperature is 360℃.更多还原