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ZnSe基片上氧化钒薄膜的制备及热非线性吸收特性
Vanadium Dioxide Thin Films Depositing on ZnSe Substrate and Thermo Nonlinear Absorption Character Research
【Author】 TIAN Xue-song LIU Jin-cheng LI Lian-jiang WANG Qi (Institute of Opto-Electronics,Harbin Institute of Technology,Harbin,Heilongjiang 150001,China)
【机构】 哈尔滨工业大学光电子技术研究所；
【摘要】 ZnSe 晶体在红外波段10．6 μm 附近透射率为70%,可作二氧化钒薄膜的基片应用于激光防护领域。VO2 薄膜用磁控溅射法制备,针对薄膜与 ZnSe 结合不好的特点,先对基片进行特殊的清洗。制备时基片温度为 450℃,氧氩流量比在0．104～0．117范围进行了多次实验。结果表明,氧氩流量比为0．11时有利于 VO2的生成, 此条件下制备的 VO2含量为51．7%,远高于其他比值下制备的薄膜。ZnSe 基片上制备的 VO2薄膜在常温下波长 10．6 μm 时透射率可达60%以上。
【Abstract】 The ZnSe crystal in the infrared wave band 10.6μm neighbor transmissibility is 70%.is a suitable substrate for vanadium dioxide thin films used in the laser protection domain.The VO2 thin films are deposited by magnetron sputtering methods,the films and the ZnSe bond not well.the substrate need special clean.The deposit temperature was 450℃.The ratio of O2 and Ar is a key parameter,lots of experiments were done between0.104 and 0.117.The results showed that when the ratio is 0.11,the VO2 is easily deposited.The VO2 content is 51.7 %.is higher than films prepared by other methods.The transmittance can be higher than 60% at 10.6μm.
【Key words】 thin films； vanadium dioxide； laser protection； magnetron sputtering； ZnSe；
- 【会议录名称】 第十七届全国激光学术会议论文集
- 【会议名称】第十七届全国激光学术会议
- 【会议时间】2005-10
- 【会议地点】中国四川绵阳
- 【分类号】O484
- 【主办单位】中国光学学会、中国电子学会