【作者】 尧舜； 刘云； 王祥鹏； 姚迪； 王立军；

【Author】 YAO Shun~(1,2) TAO Ge-tao~(1,2) WANG Xiang-peng~(1,2) LIU Yun~1 YAO Di~1 WANG Li-jun~1 ~1Keg Luboratorg of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,The Chinese Academy of Sciences,Changchun,Jilin 130033,China ~2Graduate School of the Chinese Academg of Sciences,Beijing 100039,China

【机构】 中国科学院长春光学精密机械与物理研究所激发态开放实验室；

【摘要】 利用 InGaAsP/InP 应变量子阱外延层材料制作出高功率半导体激光阵列模块。激光芯片宽1cm,腔长 1000μm,条宽100μm,填充密度为20%,前后腔面光学膜分别为单层 Al₂O₃和3（Si/Al₂O₃）,特征温度为68K,室温连续输出功率达到13．2W,器件光谱中心波长为1535．5nm,光谱宽度（FWHM）为6．5nm。更多还原

【Abstract】 InGaAsP/InP double-step gradient refractive index（GRIN）separated-confinement-heterostructure multi-quantum-well （SCH MQW）structure laser module with an emission wavelength of 1540 nm was grown.Laser bars with a stripe width of 100μm and a filling factor of 20% was fabricated.The back high-reflection（HR）coating is 3（Si/Al₂O₃）and the front anti-reflection（AR） coating is Al₂O₃.The module’s continuous wave（CW）output power reaches to 13．2W at a current of 50A.The threshold current is 10A and the central wavelength is 1535．5nm with a FWHM of 6．5nm.Characteristic temperature T₀ of 68 K is obtained when the temperature of the active region is in the range of 20～50℃.更多还原