【作者】 蔡化； 庞世甫； 王继安； 李威； 龚敏；

【Author】 Cai Hua, Pang shi-fu, Wang Ji-an, Li Wei, Gong Min Key lab of microelectronics, School of Physical Science and Technology, Sichuan University, Chengdu 610064 The College of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China Chengdu 610054

【机构】 微电子技术四川省重点实验室四川大学物理科学与技术学院； 电子科技大学微电子与固体电子学院；

【摘要】 本文设计了一个在0．8μm BiCMOS工艺、低于1V电源电压下的带隙基准电压源,能稳定产生0．61V的基准电压。该电路中采用了一种系统失调仅912μV的新型运算放大器;采取了T型电阻网络和加入曲率补偿支路的方法,实现了大于59dB 电源抑制比和-30℃至150℃范围内11．7ppm／℃的温度系数。更多还原

【Abstract】 In this paper, a bandgap reference circuit, which has a supply voltage of sub-1-V and generates a voltage of 0.61 V, has been designed based on a 0.8μm BiCMOS technology. By using a kind of new operational amplifier with only 912μV systematic offset, “T” resistor network as well as a subsidiary circuit, a PSRR of higher than 59dB and a low temperature coefficient of 11.7ppm/℃ from -30℃ to 150℃ have been achieved.更多还原