节点文献
Ho掺杂BaTiO3陶瓷的制备及其正电子湮没研究
PAT Studies of Donor-Doped BaTiO3 Ceramics
【Author】 Li Tao, Chang Fanggao, GeYongxia, Li Xigui Collage of Phsics and Information Engineering , Henan normal university Xinxiang.453007
【机构】 河南师范大学物理与信息工程学院；
【摘要】 采用固相反应法制备了掺杂不同量Ho2O3的Ba1-xHoxTiO3陶瓷(x分别为:0,0.2%,0.3%,0.4%,0.5%,0.6%,0.7%);对其室温电阻率进行了测量,结果显示其室温电阻率随掺杂量增加呈U型变化曲线;借助XRD物相分析手段对所制备样品进行了研究,表明其结构均为钙钛矿结构;采用正电子寿命谱学的方法研究了不同掺杂量Ho2O3所引起的结构缺陷。
【Abstract】 Ba1-xHoxTiO3ceramics were prepared using raw materials of BaCO3,TiO2(>99%) and Ho2O3 (>99.99%) (x=0,0.2%,0.3%,0.4%,0.5%,0.6%,.0.7%), XRD analysis indicates that the crystal structure of all the samples is perovskite structure. The room-temperature resistivity of Ba1-xHoxTiO3 ceramics was measured. The results show that the resistivity is correlated to Ho content, with a "U" shape curve; Positron lifetime spectra were performed for BaTiO3 doped with Ho2O3 and the correlation between the defects and doped content was investigated.
- 【会议录名称】 第九届全国正电子谱学会议论文集
- 【会议名称】第九届全国正电子谱学会议
- 【会议时间】2005-04
- 【会议地点】中国浙江绍兴
- 【分类号】TQ174
- 【主办单位】中国科学院核分析技术重点实验室、绍兴文理学院应用化学研究所