【作者】 罗尹虹； 郭红霞； 张凤祁； 姚志斌； 何宝平； 岳素格；

【Author】 Luo YinHong Guo HongXia Zhang FengQi Yao ZhiBin He BaoPing (Northwest Institute of Nuclear Technology,Xi’an China,710024) Yue Suge (No.771 Institute of China Aerospace Times Electronics Corporation,Beijin,100070)

【机构】 西北核技术研究所； 中国航天时代电子公司；

【摘要】 合作制备了体硅0.6μm工艺直栅和环栅不同设计结构的MOS器件,开展了稳态高剂量率电离辐射总剂量效应试验。通过对实验数据进行分析,研究当器件特征尺寸达到亚微米、深亚微米时,不同设计结构、不同辐照偏置条件对实验结果的影响。分析了器件的短沟效应、窄沟效应、DIBL增强效应,为器件设计加固提供了有益的试验数据。更多还原

【Abstract】 Different designed structure MOS devices with stripe gate and enclosed gate were jointly fabricated in bulk silicon 0.6μm process to carry out steady state high dose rate ionizing radiation total dose effect experiment.With the feature size of semiconductor devices scaling down to submicron and deep submicron,the effects of different designed structure and different radiation bias conditions on experimental results were studied by analyzing experimental data. Short-channel effect,narrow-channel effect,and DIBL enhancement effect is analyzed to provide useful test data to device design hardened.更多还原