【作者】 王柱生； 晁致远； 许金兰；

【Author】 Wang Zhusheng Chao Zhiyuan Xu Jinlan (Institute of Modern Physics Academia Sinica,Lanzhou,730000)

【机构】 中国科学院近代物理研究所；

【摘要】 本文介绍了金硅面垒~8Be 探测器的制造工艺和测试结果。有效面积157 mm~2,厚度为280μm,工作电压 150V 时,其漏电流为0．04μA。对于8．78 MeV α粒子的能量分辨率为0．54%,用该探测器通过对~8Be 带电粒子的角关联测量确定高激发能级的宇称及自旋。更多还原

【Abstract】 This paper describes a new developed Au—Si surface barrier ~2Be detector with an active area of 157 mm~2 and a thicness of 280 μm.The detector has a 1mm dead strip along a diameter separating two elelctrically independent halve of the detector.(when the operation voltage of about 150 V is applied,the detector surface leaking current is 0.04μA) the energy resolution of 0.54％ is obtained for α-particle with an energy of 8.78 MeV.The parity and the spin of highly excited energy level are determined through measurements of ~2Be chared particle angular correlation with this detector.更多还原