【作者】 向阳； 张万里； 蒋洪川； 莫绍毅； 雷云；

【Author】 XIANG Yang ZHANG Wan-li JIANG Hong-chuan MO Shao-yi LEI Yun (Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)

【机构】 电子科技大学电子薄膜与集成器件国家重点实验室；

【摘要】 采用反应磁控溅射法制备TaN_x薄膜,研究了溅射温度对薄膜成分、结构和性能的影响。结果表明,随溅射温度的升高,薄膜中氮含量先降低后升高,在560℃左右达到最低值26.71%（原子分数）。随溅射温度的升高,薄膜中依次析出TaN_0.43,Ta₄N₅,Ta₅N₆,TaN相。随着溅射温度的升高,薄膜的温度电阻系数及方阻先下降后上升,并在560℃分别达到最低值708×10^-6/℃,26.7Ω/sq。薄膜中氮含量越高,薄膜电阻温度系数及方阻越大。薄膜中存在Ta₄N₅和Ta₅N₆晶相可降低薄膜的温度电阻系数及方阻,而TaN晶相的存在导致较大的温度电阻系数及方阻。更多还原

【Abstract】 Tantalum nitride films were deposited by reactive d.c.magnetron sputtering.The composition,mi-crostructure and properties of TaN_x films deposited at various temperatures were investigated.The results show that with the increase of depositing temperature,the N content suffers a change course of decrease at first and then increase.The minimal content of N in the samples is 26.71 at% at 560℃.With the increase of depositing temperature,TAN_0.43.Ta₄N₅,Ta₅N₆ and TaN phases are separated in turn from the samples.With the increase of depositing temperature,the TCR and sheet resistance of TaN_x films are also suffered a change course of de- crease at first and then increase,and get the minimal values of 708×10^-6/℃and 26.7Ω/sq,respectively.The higher N content in the samples,the higher TCR and sheet resistance can be obtained.The existence of Ta₄N₅ and Ta₅N₆ phases in the films can decrease the TCR and sheet resistance of TaN_x films.Reversely,the exist- ence of TaN phase can increase the TCR and sheet resistance of TaN_x films.更多还原