【作者】 牛新环； 宗思邈； 檀柏梅； 刘玉岭；

【Author】 NIU Xin-huan ZONG Si-miao TAN Bai-mei LIU Yu-ling (Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China)

【机构】 河北工业大学微电子研究所；

【摘要】 化学机械抛光技术可用于生产高质量的加工表面。在蓝宝石衬底CMP过程中高的抛光速率及好的表面质量是最终的目标。在抛光液及抛光参数不变的条件下对（0001）蓝宝石村底的去除速率与抛光温度之间的关系进行了研究。采用抛光碱性介质及粒往15～25nm和浓度20%（质量分数）的SiO₂磨料。pH值为11.26。表面质量依据RMS粗糙度由原子力显微镜测定.结果表明随抛光温度的升高,去除速率随之提高。在抛光温度40℃及抛光压力0.05MPa条件下,去除速率可达4.96μm/h,粗糙度达0.1nm。在一定的温度范围内,随温度的升高去除速率也提高这一结果表明化学作用明显受温度的影响,并在一定机械作用条件下对动力学过程起控制作用。更多还原

【Abstract】 Chemical mechanical polishing （CMP） technique can he applied to produce high quality finished surface.The high polishing removal rate and good surface quality of sapphire substrate （Al₂O₃） are very important target in CMP.The relationship of removal rate and polishing temperature was studied for sapphire with c （0001） orientation under the condi- tion of unchanged slurry and process parameters.The slurry medium was alkaline,and the abrasive was SiO₂,which par- ticle size was 15-25nm and concentration was 20wt%.The pH value was 11.26.Surface quality was characterized with a- tomic force microscopy （AFM） in terms of RMS roughness.The result shows that with the polishing temperature increas- ing,the removal rate also increases.Under the condition of temperature 40℃and pressure 0.05MPa,the removal rate can reach 4.96μm/h and the RMS roughness is 0.1nm.Within a certain temperature range,with the temperature increasing the removal rate increases,which indicates that chemical action is clearly influenced by temperature and takes control ac- tion on dynamics process under the certain mechanical action.更多还原