【作者】 杜建周； 谷志刚； 陈会； 王乐新； 赵志敏； 王东生；

【Author】 DU Jian-zhou~1 GU Zhi-gang~2 CHEN Hui~1 WANG Le-xin~1 ZHAO Zhi-min~1 WANG Dong-sheng~1 (1. College of Science, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China; 2. Qingdao Semiconductor Research Institute, Qingdao 266071, China)

【机构】 南京航空航天大学理学院； 青岛半导体物理研究所；

【摘要】 采用射频磁控溅射法在Si衬底上制备了非晶的铝酸镧（LaAlO₃）薄膜。在空气环境中,分别在800、850、950℃进行了后退火处理。根据样品的吸收谱,在室温下测量了样品的发射谱,激发光波长分别为365、410、435nm。结果表明随着退火温度的提高,样品发光峰的强度逐渐增强。更多还原

【Abstract】 Amorphous LaAlO₃ thin films samples are prepared on Si substrates by using radio-frequency magne- tron sputtering deposition method.Then,the samples are annealed in the air at the temperature of 800,850, 950℃,respectively.According to the absorption spectra,the emission spectra of the samples are measured at room temperature.The excitation light wavelengths are of 365,410,435nm,respectively.With the increase of the annealing temperature,the intensity of photoluminescence peak improves gradually.更多还原