【作者】 檀柏梅； 牛新环； 时慧玲； 刘玉岭； 崔春翔；

【Author】 TAN Bai-mei NIU Xin-huan SHI Hui-ling LIU Yu-ling CUI Chun-xiang (Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,China)

【机构】 河北工业大学微电子研究所；

【摘要】 二氧化硅是目前 IC 生产中应用最广泛的层间介质,为满足光刻的要求,必须采用化学机械抛光 (CMP)工艺对介质表面进行平整化加工,分析了二氧化硅介质 CMP 机理过程,指出了磨料是影响去除速率及表面状态的关键因素,并以自制纳米二氧化硅水溶胶配制抛光浆料进行 CMP 实验研究,采用这种高浓度、易清洗、低分散度的硅溶胶纳米磨料达到了较高的去除速率和较好的表面状态,有效地减少了表面划伤。另外还分析了磨料粒径、浓度及浆料的流速对 CMP 的影响, 并且对浆料中加入的表面活性剂的作用进行了讨论。更多还原

【Abstract】 Silica is one of the most widely used materials in IC manufacture.In order to meet the photO-etching requirement,the dielectric surface must be planarization processing by using chemical mechanical polishing (CMP) method.In this paper,the CMP mechanism of silica dielectric was analyzed,and it was found that abrasive was one of the key factors influencing the removal rate and surface state.The CMP experiment was processed through taking self-made nano silica sol as abrasive.Through using such high concentration,easy cleaning and low dispersion silica sol abrasive, we got the higher removal rate and preferable surface state,and reduced the surface scratch.Otherwise,the influence of abrasive particle size,concentration and slurry flow on CMP was analyzed,and the surfactant function in slurry was discussed.更多还原