【作者】 胡宽； 顾豪爽； 张凯； 胡光； 吴小鹏； 熊娟；

【Author】 HU Kuan GU Hao-shuang ZHANG Kai HU Guang WU Xiao-peng XIONG Juan (Faculty of Physics and Electronic Technology and Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province,Hubei University,Wuhan 430062,China)

【机构】 湖北大学物理学与电子技术学院暨铁电压电材料与器件湖北省重点实验室；

【摘要】 采用体硅微细加工工艺制备了基于 AlN 压电材料的薄膜腔声谐振器,研究了器件结构中谐振区形状和面积对谐振器性能的影响．以 X 射线衍射仪、扫描电镜表征了 AlN 压电薄膜的结构及形貌,高频网络分析仪表征谐振器频率特性．测试结果表明,谐振器所用 AlN 压电薄膜具有 c 轴择优取向及良好的柱状晶结构：器件频率特性良好,谐振频率达1．759GHz,机电耦合系数3．75%,品质因数79．5．通过研究不同谐振区形状、面积谐振器的性能,明确了结构因素对器件频率特性的影响,分析了其中的机制．更多还原

【Abstract】 Film bulk acoustic resonator was fabricated in backside etching structure using silicon bulk micromachining technique,with aluminum nitride film as piezoelectric material.The influences of resonant area and figure on the resonant performance were discussed.The crystallographic orientation and cross-sectional morphology of the film were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM),respectively.Frequency response characteristic of the resonator was studied by network analyzer.The measurement results show that the AIN films were featured in c-axis preferred orientation and well-textured columnar structure.The fabricated FBAR exhibits significant frequency performance:the resonant frequency of 1.759 GHz,an effective electromechanical coupling coefficient 3.75%,and quality 79.5.The effect of the configuration factors on the characteristics of FBARs and the relevant mechanism were finally clarified.更多还原