【作者】 余大书； 焦永恒； 宿杰；

【Author】 YU Da-shu JIAO Yong-heng SU Jie (College of Physics and Electronic Information Science,Tianjin Normal University,Tianjin 300074,China)

【机构】 天津师范大学物理与电子信息学院；

【摘要】 经溶胶-凝胶法制备出 PLZT(7/40/60)纳米多层膜,对不同温度、不同层数,不同 Zr/Ti 比的 PLZT 薄膜的介电性能用精密阻抗分析仪进行介电特性分析。结果表明：煅烧温度的提高、薄膜层数的增加、锆含量的增加等均对 PLZT 薄膜的相对介电常数和介电损耗均有影响。频率为1kHz,750℃和锆含量为0．45时,薄膜的相对介电常数和介电损耗都最高。更多还原

【Abstract】 The nanosized multilayer PLZT(7/40/60)thin film was prepared by sol-gel process.Precision Impedance Analyzer investigated the samples dielectric properties formed in different temperature,different layered and different quantity of zirconium doped in film.The results show that the PLZT nanosized thin film with perovskite structure formed in different condition was effects directly with the sintering temperature,different layer and different Zr concentration. When frequency is about 1kHz,heat treatment is 750℃ and the Zr concentration is 0.45,the comparatively dielectric constant and dielectric loss of film was reach great top.更多还原