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退火气氛对Al-F共掺杂ZnO透明导电薄膜性能的影响
Influence of annealling ambiences on properties of AI-F co-doped ZnO thin films
【作者】 周丽萍; 吕珺; 汪冬梅; 陈雯雯; 吴玉程; 郑治祥;
【Author】 ZHOU Li-ping LU Jun WANG Dong-mei CHEN Wen-wen WU Yu-cheng ZHENG Zhi-xiang (School of Materials Science and Engineering,Hefei University of Technology,Hefei 230009,China)
【机构】 合肥工业大学材料科学与工程学院;
【摘要】 通过溶胶-凝胶法,采用 Al、F 共掺杂的方法在4种不同的气氛下制备 ZnO 薄膜,研究了薄膜的晶体结构、表面形貌、电阻率和透光性随退火气氛的变化关系.制备的 Al:F:ZnO 薄膜是具有六角纤锌矿结构的多晶薄膜.4种退火气氛相比,在空气气氛下退火时, 平均晶粒尺寸最大,为43.4nm,导电性能最好,电阻率可低达6.5×10-2Ω·cm.4种退火气氛下,薄膜在可见光范围内的平均透过率均达到了75%以上,其中,空气气氛下退火时薄膜的透光性最好.
【Abstract】 Al-F co-doped n-type ZnO thin films were prepared on glass substrates by sol-gel process.The structural,electrical resistivity and transmittance of the Al:F:ZnO thin films in different annealling ambiences is studied.The obtained films were polycrystalline with a hexagonal wurtzite structure without growing preferentially oriented direction in ZnO grains.In the air annealling ambience,the average crystallite size is the biggest to be 43.4nm,and the lowest electrical resistivity was found to be about 6.5×10-2Ω·cm.In The four different annealling ambiences,the average transmittance in the visible range were over 75%,and the average transmittance in the air annealling ambience is the best.
【Key words】 ZnO thin films; AI-F co-doping; sol-gel process; annealling ambiences;
- 【会议录名称】 第六届中国功能材料及其应用学术会议论文集(2)
- 【会议名称】第六届中国功能材料及其应用学术会议
- 【会议时间】2007-11
- 【会议地点】中国湖北武汉
- 【分类号】TB383.2
- 【主办单位】重庆仪器材料研究所、中国仪器仪表学会仪表材料分会、国家仪表功能材料工程技术研究中心