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不同溅射气压对β-FeSi2形成的影响
Effects of annealing Ar pressures on the sputtered β-FeSi2 film
【作者】 曾武贤; 谢泉; 梁艳; 张晋敏; 肖清泉; 杨吟野; 任学勇;
【Author】 ZENG Wu-xian XIE Quan LIANG Yan ZHANG Jin-min XIAO Qing-quan YANG Yin-ye REN Xue-yong (Department of Electronic Science and Information Technology,Guizhou University,Guiyang,550025,China)
【机构】 贵州大学电子科学与信息技术学院;
【摘要】 采用磁控溅射方法,在不同的溅射气压(Ar 气0.5~3.0Pa)条件下沉积纯金属 Fe 到 Si(100)衬底上, 通过真空退火炉在800℃对样品进行保温2h,直接形成了正交的β-FeSi2薄膜,利用 X 射线衍射(XRD)、扫描电镜(SEM)、椭偏光谱仪,对不同溅射气压下合成的β-FeSi2薄膜的结晶特性、表面形貌及光学性能进行表征,研究了不同溅射气压对制备β-FeSi2薄膜的影响.结果表明:在1.5Pa 时能形成较好的β-FeSi2薄膜,临界溅射气压在2.0Pa 附近,当溅射气压低与临界值时, β-FeSi2薄膜的成核密度较高,且成核密度随溅射气压的增大而降低;当溅射气压超过临界值以后,β-FeSi2薄膜的成核密度基本不变;薄膜的折射率 n 随压强的增大而增大,消光系数 k 随压强的增大而减小.
【Abstract】 In this paper using the magnetron sputtering method,the Fe films were deposited on Si(100)at different sputtering pressures(Ar 0.5~3.0Pa),by then annealed at 800℃ for 2 h.The influence of sputtering pressure on the crystallinity and optical properties was studied by X-ray diffraction(XRD),scanning electron microscope(SEM)and spectroscopic ellipsometry.The result show that the best β-FeSi2 films can be grown at 1.5Pa.The critical sputtering pressure is 2.0Pa,when the sputtering pressure up to the critical sputtering pressure the density of β-FeSi2 grains is high grains and decline with the increasing of sputtering pressure.When the sputtering pressure exceeds the critical sputtering pressure the density of β-FeSi2 grains is roughfly a constant;the refractive index increas and the extinction coefficient diereas with the sputtering pressure of the increasing.
【Key words】 β-FeSi2; sputtering pressure; XRD; SEM; spectroscopic ellipsometry;
- 【会议录名称】 第六届中国功能材料及其应用学术会议论文集(1)
- 【会议名称】第六届中国功能材料及其应用学术会议
- 【会议时间】2007-11
- 【会议地点】中国湖北武汉
- 【分类号】TB383.2
- 【主办单位】重庆仪器材料研究所、中国仪器仪表学会仪表材料分会、国家仪表功能材料工程技术研究中心