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无反应直流溅射中功率对ZnO:Al薄膜光电性能与形貌的影响

Influence of power on the properties and morphology of ZnO:Al films grown by non-reactive DC magnetron sputtering

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【作者】 许积文王华任明放成钢

【Author】 XU Ji-wen WANG Hua REN Ming-fang CHENG Gang (Department of Information Material Science and Engineering,Guilin University of Electronic Technology,Guilin 541004,China)

【机构】 桂林电子科技大学信息材料科学与工程系

【摘要】 采用氧化锌铝陶瓷靶材,在室温下使用无氧直流磁控溅射法于载玻片衬底上制备了 ZnO:Al 透明导电薄膜,研究了溅射功率对薄膜微观结构、电阻率和透光率的影响.结果表明:薄膜具有六方纤锌矿结构并沿 c 轴择优取向生长,沉积速率与溅射功率呈准线性关系。溅射功率对薄膜的电阻率和表面形貌有显著影响,当功率为80W 和120W 时,薄膜的电阻率值为7.2×10-3Ω·cm 和2.3×10-3Ω·cm,表面形貌分别为光滑与织构化。但溅射功率对薄膜的透光率影响不大,薄膜在可见光区的平均透光率均在90%左右.

【Abstract】 ZnO:Al thin films based on alumina doped ZnO ceramic target were prepared on slide glass substrates by non-reactive DC magnetron sputtering at room temperature.The structural,electrical and optical properties of the films with various sputtering powers were characterized by XRD,SEM,four-point probe and spectrophotometer.The experimental results show that the films are polycrystalline with hexagonal crystal structure and have a strongly preferred orientation of c-axis.The quasi-linear relationship found between sputtering power and deposition rate.The resistivity of films is 7.2×10-3Ω·cm and 2.3×10-3Ω·cm at 80W and 120W,but the surface morphology is smooth and textured respectively.However,the sputtering power has a little effect on the average transmittance,which around 90% in the visible region.

【关键词】 ZAO 薄膜功率电阻率透光率形貌
【Key words】 ZAO thin filmpowerresistivitytransmittancemorphology
【基金】 广西高校百名中青年学科带头人资助计划项目(RC20060809014)
  • 【会议录名称】 第六届中国功能材料及其应用学术会议论文集(1)
  • 【会议名称】第六届中国功能材料及其应用学术会议
  • 【会议时间】2007-11
  • 【会议地点】中国湖北武汉
  • 【分类号】TB383.2
  • 【主办单位】重庆仪器材料研究所、中国仪器仪表学会仪表材料分会、国家仪表功能材料工程技术研究中心
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