【作者】 程文秀； 丁爱丽； 仇萍荪； 何夕云； 郑鑫森；

【Author】 CHENG Wen-xiu,DING Ai-li,QIU Ping-sun,HE Xi-yun,ZHENG Xin-sen (State Key Lab. of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050,China)

【机构】 中国科学院上海硅酸盐研究所高性能陶瓷与超微结构国家重点实验室；

【摘要】 采用射频(RF)磁控溅射的方法,以Pt／Ti／ SiO2／Si(100)为衬底材料,制备了高度(111)择优取向生长的(Zr0．8,Sn0．2)TiO4(ZST)薄膜。运用X射线衍射(XRD)和原子力扫描显微镜(AFM)对ZST薄膜的微结构和表面形貌进行了研究。分析了薄膜(111)取向生长的机理。采用X射线光电子能谱(XPS)对薄膜的表面成份进行了分析。研究了ZST、薄膜低频下的介电性能,在100kHz下薄膜的介电常数和介电损耗分别为36．6和0．0069,薄膜的电容温度系数(TCC) 在1MHz下为8．02×10-5／℃。更多还原

【Abstract】 (Zr0.8,Sn0.2)TiO4 (ZST) thin films were grown on Pt/Ti/SiO2/Si(100) substrate by radio-frequency magnetron sputtering. The microstructure and the surface morphology of ZST thin film have been studied by X ray diffraction and atomic force microscopy. The composition of ZST thin film was analyzed by XPS. The low frequency dielectric properties of ZST thin film was also discussed. The temperature coefficient of capacitance (TCC) of ZST thin film is about 8. 06× 10-5/℃ at 1MHz. The dielectric constant and dielectric loss at 100kHz are 25. 2 and 0. 0068 respectively. The large dielectric loss compared with ZST ceramic is caused by the structure disorder of the thin film.更多还原