【作者】 牛新环； 王胜利； 檀柏梅； 刘玉岭；

【Author】 NIU Xin-huan,WANG Sheng-li,TAN Bai-mei,LIU Yu-ling (School of Information Engineering, Hebei University of Technology, Tianj in 300130,China)

【机构】 河北工业大学信息工程学院；

【摘要】 ULSI制造技术进一步向高集成、低成本方向迅速发展。如何保证ULSI衬底加工中的更高平整、更低粗糙度与低成本是目前微电子进一步发展中的关键技术。化学机械抛光法(CMP)是目前公认的全局平面化最好的方法。由此我们对ULSI硅衬底进行了循环抛光试验,并对每次抛光液循环使用后的去除速率及pH值进行了测定,结果发现pH值随循环次数的增加呈缓慢降低的趋势,而抛光速率在一定的 pH值范围内并不随pH的变化而变化,这说明在硅衬底的CMP过程中化学机械反应是复杂的过程,分主反应和次反应,而主反应应是催化反应,次反应是氧化还原反应,本文对该理论进行了具体的讨论。更多还原

【Abstract】 With the rapidly developing of ULSI fabrication technique to high integration and low cost, the key technology is how to ensure the higher flattening, lower roughness and lower cost. The chemical mechanical polishing (CMP) method is the best one for global planarization. We did the cycle polishing experiment for ULSI silicon substrate using CMP method. The removal rate and pH value were measured after each cycle of slurry. It was found that the pH value was decreasing slowly with the increasing with cycle times, and the removal rate was nearly unchangelessness within a certain pH range, which illustrated that the chemical mechanical reaction was a complex process during the silicon substrate CMP process. There had main reaction and secondary reaction. The main reaction was catalytic reaction, and the secondary reaction was oxidation reduction reaction. The detail theory was discussed in this paper.更多还原