【作者】 刘洪涛； 桑文斌； 詹峰； 李万万； 李刚； 闽嘉华；

【Author】 LIU Hong-tao, SANG Wen-bin, ZHAN Feng, LI Wan-wan, LI Gang, MIN Jia-hua (Department of Electronic Information Materials, Shanghai University. Shanghai 200072, China)

【机构】 上海大学延长校区电子信息材料系；

【摘要】 研究了可控制Cd、In气氛下退火对Cd0．9Zn0．1 Te性能的影响。不同Cd压下(In压不变:1×10-2Pa)退火的实验表明:在平衡Cd压下退火电阻率可从6．7×105Ω·cm显著地提高到109-1010Ω·cm,红外透过率提高了6％-8％。随后在不同In压下(Cd压为平衡压)进行了一系列的实验,实验结果表明:电阻率可提高到108- 1010Ω·cm,并且随着In压的增加,晶片的导电类型逐渐的由P型向n型转变。基于以上的实验数据,推导了873 -1073K,平衡PCd下In在Cd0.9Zn0．1 Te中的扩散系数表达式:1．35×exp(-1．85／kT)cm2／s。更多还原

【Abstract】 The effect of annealing under controlled cadmium and Indium vapor on Cd0.9Zn0.1 Te wafer had been investigated. First a series of experiment about anneal under different PCd while PIn kept constant about 1 × 10-2 Pa had been done. The results indicated that the resistivity had increased remarkably from 6. 7×105 Ω · cm to 109- 1010Ω · cm and IR transmision enhanced a bout 6%-8% after anneal under equilibrium PCd. Furthermore the experiment about anneal under different (PIn) while PCd kept equilibrium particial pressure were carried out. The experimental results showed that the resistivity might rise up to 108-1010Ω · cm and conduction types changed from p-type to n-type with pIn increasing. Based the above experimental data the expression of DIn was deduced:1. 35×exp(-1.85/kT)cm2/s(873-1073K).更多还原