【作者】 黄杨程； 梁晋穗； 张永刚； 刘大福； 庄春泉； 李萍； 龚海梅；

【Author】 HUANG Yang-cheng, LIANG Jin-sui, ZHANG Yong-gang, LIU Da-fu, ZHUANG Chun-quan, LI Ping, GONG Hai-mei(State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

【机构】 传感技术国家重点实验室中国科学院上海技术物理研究所； 信息功能材料国家重点实验室中国科学院上海微系统所；

【摘要】 红外探测器的低频噪声是制约器件能否应用于空间遥感的关键因素之一。本文测试了典型的铟镓砷(InGaAs)红外探测器的低频噪声,测试结果表明器件的Hooge系数αH=2 ×10-5-7 ×10-5,噪声拐点较大。讨论了暗电流与器件低频噪声的关系,比较了不同钝化工艺研制的器件的低频噪声,结果表明通过加强表面钝化工艺可有效地降低器件的低频噪声。更多还原

【Abstract】 Low frequency noise is one of the most important factors in infrared detectors for space remote sensing applications. In this article the low frequency noise of typical InGaAs infrared detector was measured. The experimental results show that Hooge coefficient αH of the detector is about 2×10-5-7×10-5, and that the transition frequency of noise is larger. The relationship of dark current and low frequency noise is discussed. The comparison of low frequency noise of devices after different passivation processes is also given. The improvement of surface passivation process is an effective method to reduce the low frequency noise of device.更多还原