【作者】 刘梦伟； 佟建华； 王兢； 董维杰； 崔天宏； 王立鼎；

【Author】 LIU Meng-wei, TONG Jian-hua, WANG Jing, DONG Wei-jie, CUI Tian-hong, WANG Li-ding( MST research center, Dalian University of Technology, Dalian 116023, China; Department of Electronic Engineering, Dalian University of Technology, Dalian, 116023, China; Department of Mechanical Engineering, University of Minnesota,111 Church Street SE, Minneapolis, MN 55455, USA)

【机构】 大连理工大学微系统中心； 大连理工大学电子工程系；

【摘要】 采用改进的溶胶-凝胶技术,在Pt(111)/Ti/SiO2/Si(100)基底上制备了不同厚度的Pb(Zr0.50Ti0.50)O3薄膜,在600℃的退火条件下获得了晶格完善的钙钛矿结构。通过前驱体溶液的差热(DTA)、热重(TGA)实验以及PZT膜加热到不同温度的物相转化分析了PZT薄膜的相结构演化过程。采用X射线衍射仪和扫描电子显微镜表征了PZT薄膜的物相和微观形貌,用HP4194A阻抗分析仪测量了薄膜的介电性能。实验结果表明,随着退火循环次数的增多,PZT(111)相含量增加;薄膜的晶粒大小不随薄膜厚度改变;薄膜晶粒呈柱状生长;薄膜的介电常数随测量频率的增加而降低,随薄膜厚度增加而增加。更多还原

【Abstract】 Lead zirconate titanate PbZr0.5 Ti0.5O3(PZT) thin films of various thickness were prepared by a modified sol-gel method on Pt(111)/Ti/SiO2/Si(100) substrates. The films were well crystallized and had single perovskite phase structure at an annealing temperature of 600℃. Differential thermal analysis (DTA), thermogravimetric analysis (TGA) of the precursor solution, and the phase transformation of PZT films at different temperatures collectively were utilized to study the phase transformation of PZT materials. X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to characterize the phase stricture and micro-morphology of the PZT films. The dielectric properties were measured using an impedance analyzer (HP4194A). The (111) crystalline phase of the PZT films increases with the increase of annealing circle. The grain size had no difference between PZT films of various thickness and all the films have well aligned columnar grains. Dielectric constants decreased with increasing frequency and increased with the increase of PZT film thickness.更多还原