【作者】 李卫青； 顾广瑞； 李英爱； 何志； 冯伟； 刘丽华； 赵春红； 赵永年；

【Author】 LI Wei-qing, GU Guang-rui, LI Ying-ai, HE Zhi, FENG Wei, LIU Li-hua,ZHAO Chun-hong, ZHAO Yong-nian (National Key Laboratory of Superhard Materials, Jilin University, Changchun 130023, China)

【机构】 吉林大学超硬材料国家重点实验室；

【摘要】 用RF磁控溅射的方法在最佳沉积条件下在Si(100)基底上沉积了纳米氮化硼薄膜,然后对薄膜在真空度低于5×10-4pa、温度分别为800℃和1000℃条件下进行了表面热处理,分别用红外光谱、原子力显微镜以及不同退火温度的场发射试验对薄膜进行了研究,结果表明表面热处理对BN薄膜的表面形貌没有明显影响,样品场发射特性的变化可能与表面负电子亲和势有关,未进行热处理的样品阚值电场较低,可能归因子表面负电子亲和势效应,阈值电场为8V/μm,发射电流为80μA,热处理温度为800℃时,负电子亲和势仍然存在,直到热处理温度达到1000℃时,表面负电子亲和势才消失.更多还原

【Abstract】 Boron nitride (BN) nanometer thin films are synthesized on Si (100) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5×10-4Pa and the temperature of 800℃ and 1000℃ respectively. And the films are studied by fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morpho!ogy of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8V/μm and the emission current of 80μA are obtained. The surface NEA is stili presence at the heat treatment temperature of 800℃ and disappeared at temperature of 1000℃.更多还原