【作者】 姚应红； 孔向阳； 戴嘉维； 李戈扬；

【Author】 YAO Ying-hong;KONG Xiang-yang;DAI Jia-wei;LI Ge-yang The State Lab. of MMCs, Shanghai Jiao Tong University,Shanghai, 200030, China Thin Film Materials Laboratory Soochow University Suzhou, 215006, China

【机构】 上海交通大学金属基复合材料国家重点实验室；

【摘要】 采用多靶磁控轮溅的方法沉积Ti-Si-N系纳米混合膜.利用XRD、TEM以及EDS等手段分析了薄膜的相组成及微结构.研究结果表明,薄膜以TIN为主晶相,并有一定量的Si₃N₄化合物相存在.这些化合物是非晶或纳米晶沿TiN晶界相分布,抑制了TiN晶粒生长,使TiN也是纳米晶.随Si含量的增加,薄膜中Si₃N₄化合物相增加,薄膜的非晶化程度提高。压痕法对薄膜的硬度测量结果表明,薄膜在低Si含量4at%时,表现出高硬度,其值超过35GPa;然而当薄膜中Si含量超过15at%时,薄膜硬度低于TiN薄膜的硬度,其原因与薄膜中非晶态化合物的含量增加有关.更多还原

【Abstract】 The nanocomposite thin films in Ti-Si-N system prepared by reactive sputtering were investigated, and thephase constitutes and microstructures were examined by means of XRD, TEM and EDS. The results show that the thinfilms are composed of TiN, and litter amount of Si₃N₄. These compounds exhibit amorphous or nanocrystalline anddistributed in the grain boundary of TiN, resulting in the nanosized TN grains. The results also indicate that theamount of the Si₃N₄ compound increases with the content of silicon in thin films. The thin films could exhibit the highhardness value above 35GPa at 4at%Si. However, hardness of films is lower than that of TiN thin film when thecontent of silicon exceeds 15at%, which could be responding to the amount of amorphous in the films.更多还原