【作者】 刘贵昂； 贺德衍； 谢二庆；

【Author】 LIU Gui-ang;HE De-yan;XIE Er-qing Department of Basic Science, Zhanjiang Ocean University,Zhanjiang, Guangdong, 524088. China Department of Physics, Lanzhou University Lanzhou, 730000, China

【机构】 湛江海洋大学基础科学系； 兰州大学物理系甘肃 兰州 730000；

【摘要】 用射频(13.56 MHz)反应溅射法制备了a-SiC:H薄膜,并将制得的薄膜采用高能γ射线进行辐照。采用电阻率、Raman及红外光谱对薄膜的结构与特性变化规律进行表征。结构与特性分析表明:随γ射线辐照剂量的增加,a-SiC:H薄膜存在结晶化的趋势,直接导致其电阻率的变小。通过与离子辐照进行比较,γ射线辐照a-SiC:H薄膜与离子辐照a-SiC:H薄膜的效应完全不同。前者使之向晶态转变,而后者则使其中的晶态向非晶态转化.经γ射线辐照后薄膜的透过率均低于原膜的透过率.但在部分波段内,原膜及低剂量处理后薄膜存在一定的增透作用.更多还原

【Abstract】 Amorphous hydrogenated silicon carbide(a-SiC:H) films were prepared by the reactive sputtering method,which were irradiated by high energy γ rays. Using resistivity, Raman scattering,and infrared transimissingspectroscopy, the authors investigated the γ rays irradiation effects on the structure and properties of a-SiC: H films.It is found that the increase of irradiation doses results in light crystallization in a-SiC:H films and the decrease inresistivity. There is sharply difference in irradiation effects on a-SiC:H films between γ rays and ions, and the formermake the crystal composition increasing. Moreover, the latter is opposite. The infrared transmittance of a-SiC:H films,which were irradiated by γ rays, was lower than that of as-grown films. Within some wavelength, all the films havestrengthen transmittance action.更多还原