【作者】 邵乐喜； 刘小平； 屈菊兰； 谢二庆； 贺德衍； 陈光华；

【Author】 SHAO Le-xi;LIU Xiao-ping;QU Ju-lan;XIE Er-qing;HE De-yan;CHEN Guang-hua Department of Physics Test centre, Zhanjiang Normal College, Zhanjiang, 524048, China School of Physics Science and Techology Lanzhou University Lanzhou, 730000, China School of Materials Science and Engineering, Beijing Polytechnic University Beijing, 100022, China

【机构】 湛江师范学院物理系； 湛江师范学院测试中心； 兰州大学物理科学与技术学院； 北京工业大学材料科学与工程学院；

【摘要】 以氮气为杂质源,采用微波等离子体化学气相沉积(MWPCVD)技术进行了金刚石薄膜的原位掺杂,研究了氮掺杂对CVD金刚石薄膜的形貌结构和生长行为的影响.运用SEM、XRD和FTIR等手段对样品进行分析表征。实验结果表明,原位氮掺杂的CVD金刚石薄膜的晶面显露、晶粒尺寸、致密性和生长速率等均强烈地依赖于反应气体中氮源浓度比;如果氮源气体流量适当,杂质氮不仅能进入金刚石薄膜晶格中,还能与薄膜中碳原子形成化学键结合.更多还原

【Abstract】 The in situ nitrogen doped diamond films were fabricated byusing og nitrogev gas as the doping source withmicrowave plasma CVD technique. The influence of the gas flow ratio of nitrogec to carbon source on the structureproperties and growth behavior of the prepared films have been investigated by means of SEM, XRD and FTIR. Theresults show that the surface morphology, particles size and growth rate are all dependent intensively on the ratio of Nto C in reactive gases, and that under the optimum ratio of N to C, the impurity nitrogen can incorporate to diamondfilms and bond to the carbon atoms of the film lattice as well.更多还原