【作者】 顾广瑞； 何志； 李英爱； 赵永年；

【Author】 GU Guang-rui;HE Zhi;LI Ying-ai;ZHAO Yong-nian National Laboratory for Superhard Materials, Jilin University Jilin Changchun, 130023, China

【机构】 吉林大学超硬材料国家重点实验室；

【摘要】 本文研究了纳米A1N薄膜的导电性与不同的基底材料和不同的厚度的关系.在常规的溅射反应器中,我们使用A1靶,通入Ar+N₂的混合气体,在常温下和总压力为1.0Pa的条件下进行溅射,在不同的衬底上制备出了不同厚度的纳米A1N薄膜.我们直接在空气中测量了不同厚度和不同基底材料的纳米A1N薄膜的电阻率,得出以下结论:同一基底材料的电阻率,随着厚度的增加而非线性的增大,不同基底材料在同一厚度的电阻率也不同.更多还原

【Abstract】 We researched the conductivity of nanometer thin AIN films depended on the different substrate materialsand on the thickness of the films in this paper,The nanometer AlN films with different thickness were deposited byreactive magnetron sputtering of a Al targets in an Ar+N₂ mixture in a conventional sputtering reactor. The sputteringwas carried out at room temperature of the substrate and at a total pressure of 1.2 Pa. The conductivity of the films wasmeasured in the air. It is found that the conductivity of the films depends on the thickness following the non-linerincrease with the increase of the thickness and the conductivity of the films deposited different substarte materials isdifferent at the same thickness.更多还原