【作者】 何志； 顾广瑞； 李英爱； 殷红； 赵永年；

【Author】 HE Zhi;GU Guang-rui;LI Ying-ai;YIN Hong;ZHAO Yong-nian National Laboratory for Superhard Materials, Jilin University Changchun, 130023, China

【机构】 吉林大学超硬材料国家重点实验室；

【摘要】 本文研究了纳米TiO₂薄膜的导电性与不同的基底材料和不同的膜厚的关系,以及带隙宽度与不同膜厚的关系。在磁控溅射反应器中,我们使用Ti靶,通入Ar和O₂的混合气体,制备出了纳米TiO₂薄膜.溅射是在常温下和总压力为1.2Pa的条件下进行的,薄膜膜厚大约12～159nm.在空气中我们测量了不同膜厚和不同基底材料的纳米TiO₂薄膜的电阻率,发现同一基底材料的电阻率,随着膜厚的增加而非线性的增大.当达到一定厚度,纳米TiO₂薄膜的电阻率趋于无穷大,并且不同基底材料在同一膜厚的电阻车也不相同.同时得出二氧化钛薄膜的带隙宽度随着薄膜厚度的变化而变化的结论。更多还原

【Abstract】 The dependence of the conductivity of thin TiO₂ layers on the different substrates and on the thickness of thefilms is presented. The TiO₂ films were deposited by reactive magnetron sputtering of a Ti targets in an Ar+O₂ mixturein a conventional sputtering reactor. The sputtering was carried out at room temperature of the substrate and at a totalpressure of 1.2 Pa. Thickness of the films varied between 12 and 159 nm. The conductivity of the films was measuredin the air. It is found that the conductivity of the films deposited on the same substrate materials depends on thethickness following the non-liner increasing with the variety of the thickness. conductivity of the films goes to infinityat a certain thickeness and that of the films deposited different substarte materials is different at the same thickness. Theconclusion that the energe width of TiO₂ thin films changes with the thickness was educed at the same time.更多还原