【作者】 毛旭； 周祯来； 杨宇；

【Author】 MAO Xu;ZHOU Zhen-lai;WANG Yong;YANG Yu Department of Material Science and Engineer, Yunnan University Kunming, 650091, China

【机构】 云南大学材料科学与工程系；

【摘要】 采用磁控溅射方法沉积Ge和Si材料在Si(100)衬底上.用喇曼散射对不同工艺下的结构和成分进行了分析,表明制备Ge和Si单晶膜的优化衬底温度为400℃左右.分析了Si/Ge多层膜中Si-Ge键光学振动模式不出现的原因,主要是溅射材料Si和Ge的晶态不同造成的.在喇曼谱中现察到Si-Si键和Ge-Ge键光学声子峰和声学声子峰。更多还原

【Abstract】 The films of Ge and Si were grown on the substrate Si (100) by magnetron sputtering. The structure andcomposition were analysised by Raman scattering at the different sputtering condition. The results indicate that thesingle crystal films of Ge and Si were prepared at the substrate temperature of 400℃. Because the films of Ge and Sihave different structure, The optic vibrate mode of Si-Ge bond is disappear. Both Si-Si bond and Ge-Ge bond areobserved the peaks of phonons and acoustic phonons in Raman spectrum.更多还原