【作者】 尚淑霞； 姚伟峰； 王少伟； 许效红； 候云； 王弘； 余金中；

【Author】 SHANG Shu-xia;YAO Wei-feng;WANG Shao-wei;XU Xiao-hong;HOU Yun;WANG Hong;YU Jin-zhong State Key Laboratory of Crystal Materials, Shandong University Jinan, 250100, China State Key Laboratory on Integrated Optoelectronics, Beijing, 100084, China

【机构】 山东大学晶体材料国家重点实验室； 中国科学院集成光电子国家重点实验室；

【摘要】 采用化学溶液沉积法在硅（100）衬底上制备了以Bi₂Ti₂O₇为隔离层的PZT铁电薄膜,研究测量了退火温度、时间对薄膜的晶体结构和表面形貌的影响,结果表明,在750℃退火10min可以得到结晶性较好、具有单一钙钛矿结构PbZr_0.5Ti_0.5O₃的薄膜。薄膜表面无裂纹、晶粒排列致密、晶粒大小及分布均匀。薄膜的介电常数为59.4,介电损耗为0.016.偏压从-10～10V,记忆窗口为2V。外加电压达11V时,漏电流密度为1.28×10^-8A/cm²。说明薄膜的绝缘性很好。PZT/Bi₂Ti₂O₇/Si 薄膜适合于制备新型铁电场效应器件。更多还原

【Abstract】 PZT thin film have be prepared by chemical solution decomposition technique on Si（100） substrate using aBi₂Ti₂O₇ film as a buffer layer.The influence of annealing temperature and time on the crystalline and surfacemorphology of PZT films were studied. The result indicate that,the PZT/Bi₂Ti₂O₇/Si films annealed at 750℃ for 30minutes have single perovskite phase. The surface of the film is smooth and no slits. The film is dense with uniformgains. The dielectric constant is 59.4 and the loss tanδ is 0.016, the memory window is 2V,the leakage current is1.28×10^-8A/cm² when a applied voltage is 11V.These results show the PZT/ Bi₂Ti₂O₇/Si films high insulatingproperties and suitable for making new FEFETS devices.更多还原