【作者】 王蜀霞； 王万录； 廖克俊； 胡陈果； 孔春阳； 马勇；

【Author】 WANG Shu-xia;WANG Wan-lu;LIAO Ke-jun;HU Chen-guo, KONG Chong-yang;MA Yong Chongqing University Chongqing 400044,China

【机构】 重庆大学A区数理学院；

【摘要】 本文研究了P型半导体金刚石膜中硼掺杂对金刚石膜电子性质及力学性质的影响。利用热灯丝CVD和微波等离子体CVD方法制备金刚石膜并采用H₂气携带[B（CH₃）₃]实现硼掺杂。应用SEM,Raman,SIMS和Hall效应测量对掺杂金刚石膜进行分析和表征。实验结果表明硼掺杂可改善金刚石膜质量和增强金刚石膜的定向生长,然而高浓度的硼掺杂可引起金刚石膜晶格常数的改变和增大的内应力,并引起Fano效应。本文对实验结果进行了讨论,并对硼掺杂效应进行了理论分析。更多还原

【Abstract】 The boron doping effect on the electrical property and dynamic property of p-type diamond films wasinvestigated in this paper.Heteroepitaxial diamond films on Si（100） were grown via electron emission and a biasvoltage in a microwave plasma CVD and hot filament CVD. The boron source of the doped diamond film was B（CH₃）₃which was introduced by H₂.The effect of boron doping on the electronic property and dynamic property of diamondfilms was investigated by Raman spectroscopy, SEM, SIMS and Hall effect. Experiment results show that borondoping may improve the diamond films quality and enhance the oriented growth of diamond films. But heavily borondoping would change the lattice constant,increase the internal stress and the strain and produce Fano effect.更多还原