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高纯电子铝箔电蚀机理的计算机辅助分析
Computer-aided Analysis on Mechanism of Aluminum Electrochemical Etched
【Author】 FENG Zhe-sheng;YANG Bang-chao Institute of Information Materials Engineering, University of Electronic Science and Technology Chengdu 610054, China
【机构】 电子科技大学信息材料工程学院;
【摘要】 通过对铝箔在2M HCl溶液中点蚀循环伏安曲线的计算机模拟,提出了铝箔在Cl~-作用下新的点蚀机理。该机理给出了Cl~- 在点蚀过程中的吸附和输运机制,可解释点蚀的发生与发展过程,给出了腐蚀液酸度对点蚀的影响机理。
【Abstract】 The electrochemical behavior of Al in 2M HCl has been simulated by computer-aided analysis. Based on thesimulation, a new appropriate corrosion mechanism of Al electrochemical etched such as chloride ion adsorbing onaluminum surface, chloride ion transferring during the oxide film, pit initiation and growth has been investigated. Therelation between acidity and pit corrosion has also been discussed.
- 【会议录名称】 第四届中国功能材料及其应用学术会议论文集
- 【会议名称】第四届中国功能材料及其应用学术会议
- 【会议时间】2001-10
- 【会议地点】中国厦门
- 【分类号】TG174
- 【主办单位】中国仪器仪表学会仪表材料分会