【作者】 张吉英； 张振中； 单崇新； 钟国柱； 刘益春； 申德振；

【Author】 ZHANG Ji-ying;ZHANG Zhen-zhong;SHAN Chong-xin;ZHONG Guo-zhu;LIU Yi-chun;SHEN De-zhen Open Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130021, China

【机构】 中国科学院长春光学精密机械与物理研究所激发态物理开放研究实验室；

【摘要】 在低压MOCVD条件下,采用等离子体协助方法进行ZnS和ZnS:Mn 外延层生长。在普通玻璃衬底上,150℃生长的ZnS外延层由X光衍射谱表明有较强的(111)衍射峰,随生长温度提高至350℃,位于(111)的ZnS衍射峰值半高宽(△2θ)变窄(0.21°),表明获得较高的ZnS 外延层质量。由于采用等离子体协助分解,使TCM 由原来热分解温度500℃下降至350℃可完成ZnS:Mn 外延层生长,并在室温下观测到起因于Mn 中心,发光峰值位于596 nm 的电致发光。更多还原

【Abstract】 ZnS and ZnS: Mn thin films were grown by plasma-assisted metal organic chemical vapor deposition(PA-MOCVD). A clear diffraction peak of (111) orientation was observed on ZnS/glass at the growth temperature of150℃, and especially at 350℃, the (111) peak half width(Δ2θ) of ZnS films was narrowed, about 0.21°. TheZnS: Mn films doped with tricarbonylmethy-lcyclopentadienyl manganese(TCM)as the dopant were obtained. AC-thinfilm ZnS: Mn (Al/ZnS: Mn/SiON/ITO) electroluminescent device was fabricated and the threshold voltage was 28 V,which exhibited a light emission at room temperature. The peak wavelength is 596 nm, which indicated that theluminescence center is Mn atom.更多还原