【作者】 史向华； 刘小兵；

【Author】 SHI Xiang-hua;LIU Xiao-bing Dept. of Phys, Changsha Univ. of Electr. Power, Changsha, 410077, China

【机构】 长沙电力学院物理系；

【摘要】 多孔硅微腔是采用交替变化脉冲腐蚀电流密度的方法制成的多孔度周期性变化的多孔硅结构,即多孔硅微腔。我们用原子力显微镜(AFM)和扫描电子显微镜(SEM)对多孔硅微腔的侧向解理的截面进行了观测,得到了不同多孔层及其界面处的图像。微腔截面的扫描电镜(SEM)图像清楚地显现出第Ⅱ型多孔硅微腔的“三明治”结构,即中心发光层被夹在两个Bragg 反射镜之间。这些结果表明结合分子束外延技术和电化学腐蚀方法可以很容易得到多孔硅微腔。更多还原

【Abstract】 Porous silicon microcavities was etched with alternate varied current density which made the porositychange periodically, namely porous silicon microcavities. We use atomic force microscopy (AFM) and scanningelectron microscopy to investigate the cross-sedtion of the porous silicon microcavities structure and get images ofdifferent layers with different porosity Scanning electron microscopy micrograph of the porous silicon microcavitiesclearly shows the sandwich structure, that is, active layer enclosed between two distributed porous silicon Braggreflectors. These results reveal that the porous silicon microcavities can be easily fabricated be electrochemical etchingof the molecular beam epitaxy grown silicon multilayers.更多还原