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宽禁带半导体材料及纳米材料的低温光致发光研究

Low Temperature Photoluminescence Study on Broad Forbidden Band Semiconductor Material as well as Nanometer Material

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【作者】 万寿科孙学浩张金福王占国

【Author】 WAN Shou-ke;SUN Xue-hao;ZHANG Jin-fu;WANG Zhan-guo Material science Laboratory, Semiconductors Institute, Academia Sinica, Beijing, 100083, China

【机构】 中国科学院半导体研究所材料科学实验室

【摘要】 我们近期建立了一套适用于宽禁带半导体材料和纳米材料进行低温PL 测试的系统。该系统对MOCVD 法生长,以适当配比双掺Si、Zn 杂质的6H—GaN 单晶薄膜进行测量。在300K时,A 峰为带边峰,波长为367.1nm(3.375eV);B 峰为Si、Zn发光峰,波长为429.8mm(2.883eV)。B 峰强度是A峰的14倍左右,该材料可作为制造蓝光LED的优良材质。对掺N的6H—SiC 单晶体在20kV高压下离子注入B(硼),其浓度为1017cm-3,进而在1700℃超高温下进行热处理获得P型SiC样品,在4.76~130K进行变温PL谱测量,其结果我们分析为A,B,C峰是带边峰,D 峰为与硼受主有关的峰。在130K以下,随温度降低A,B,C 峰的能量和幅度而渐次地增强,符合半导体光致发光规律。其次,对掺不同杂质例如:Mn(锰)、Hf(铪)、Er(铒)的硅酸盐纳米材料进行了变温PL 谱测量,在蓝、绿光波段获得极强的发光。此外,通过以上三种类型样品的测量结果,表明该PL 测试系统具有实用、精确、快捷等特点。

【Abstract】 Recently, we have established a set of low temperature PL test system for broad forbiddem bandsemiconductor material and nonameter material. Said system is utilized for the measurement on 6H-GaN single crystalfilm grown by MOCVD method and doped with Si、Zn impurities according to adequate prescription. At 300K, Peak Ais a bandside peak, its wavelength is 367.1 nm (3.375eV); Peak B shows the light-emitting peak of Si、Zn and thewavelength turns out to be 429.8nm (2.883eV). No PL peak has been seen in yellow and red light ranges. The intensityof peak B is about 14 times of the peak A intensity, said material can turn out to be an excellent substance formanufacturing blue light LED. At 20kV high voltage, N-doped 6H-SiC single crystal, with a density of 1017cm-3, ision-implanted with Boron (B) ion and further heat treated at super high temperature1700℃, so as to obtain P-type SiCsample. When it is carried out a temperature-varying PL spectrum measurement at low temperature 4.78~180K, itsresult tells, according to our analysis, that peaks A, B, and C are band side peak, peak D is a peak related with boronacceptor. Below 130K, along with the decrease of measurement temperature, peaks A, B, and C have their energy andmagnitude gradually increased, this is in accord with the rules of semiconductor photo luminescence, the detailedfeatures are waiting for further study. Nextly, measurements are made on silicate nonameter materials doped differentlywith Mn、Er and Hf to have obtained stronger PL light emission of blue and green wave bands. The measurementresults of the above three types samples show that said PL measurement system has the characteristics of practical use,precision and quickness.

【基金】 国家自然科学重点基金
  • 【会议录名称】 第四届中国功能材料及其应用学术会议论文集
  • 【会议名称】第四届中国功能材料及其应用学术会议
  • 【会议时间】2001-10
  • 【会议地点】中国厦门
  • 【分类号】TB383
  • 【主办单位】中国仪器仪表学会仪表材料分会
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