【作者】 张群社； 陈治明； 李留臣； 刘博； 蒲红斌； 封先锋；

【Author】 ZHANG Qun-she , CHEN Zhi-ming , LI Liu-chen ,LU Bo, PU Hong-bin , FENG Xian-feng (Department of Electronic Engineering ,Xi’an University of Technology ,Xi’an 710048 ,Shanxi,China)

【机构】 西安理工大学自动化与信息工程学院；

【摘要】 采用有限元分析法系统地研究了大尺寸SiC晶体PVT法生长装置中感应加热线圈的不同匝间距、线圈和坩埚之间不同相对位置对生长腔、粉源以及生长晶体中温度场的影响;分析比较了不同匝间距和线圈位置对晶体生长面径向温度梯度的影响。结果表明:在中频电源的输出功率和频率固定,且线圈匝数不变的条件下,通过缩小匝间距可以提高系统的加热效率,但同时会使晶体生长面的径向温度梯度增大,增加了晶体中的热应力,从而诱发晶体的结构性缺陷。为此,讨论并提出了生长系统的优化设计参数。更多还原

【Abstract】 In this paper, the influences of different coupling clearances of the multi-turn induction coil and different relative positions between the coil and the crucible on the temperature distribution of the growth chamber、SiC powder and as-grown crystal have been investigated systematically for the large size SiC growth. By comparisons of the radial temperature gradients of crystal growth surfaces under the conditions of diverse coupling clearances and locations of RF coil, it can be concluded that induction heating efficiency can be improved by reducing the space between the turns of coil, while the radial temperature gradient of growth surface would also be increased, which can aggrandize the thermal stress inducing the structure defects such as micropiple and dislocation in the crystal. All simulations results indicate that the design parameters can be optimized in (5) of table 2 below for the growth system, assuming that the RF power, frequency and turns of coil are constant.更多还原