【作者】 李科佳； 王金延； 于民； 田大宇； 张录； 金玉丰；

【Author】 Kejia Li Jinyan Wang Min Yu Dayu Tian Lu Zhang Yufeng Jin (Institute of Microelectronics,Peking University,Beijing,100871)

【机构】 北京大学微电子研究院；

【摘要】 PIN硅基高能粒子薄探测器在空间探测、核物理检测、医药环境测量方面有着广泛的应用。它可以用于甄别高能粒子的种类和能量。薄探测器越薄,高能粒子的能量分辨率越好。然而,由于受到传统硅微加工中某些工艺的限制,制作出厚度低于100μm的薄探测器成为了瓶颈。本文设计并开发了一种超薄PIN粒子探测器的整套加工工艺,并对制造出的探测器进行了测试和特性分析。实验结果表明,基于TMAH工艺的探测器厚度可达57μm,面积为113mm²。同时,它还具有良好的电学特性和辐射特性。探测器工作状态的反向漏电流达到nA数量级,比面垒工艺制备的探测器下降1-2个数量级:用²³⁷Am源进行测试,5.536MeV的α源的能量分辨率为0.48%-0.56%,噪声为17.55keV。更多还原

【Abstract】 Ultra-thin PIN silicon high energy particles detector has extensive application in the areas of aerospace, nuclear and medical detection.It can be used to measure kinetic energy and identify particles.The thinner the detector is, the higher the energy resolution gets.However,thin detector with thickness less than 100μm is difficult to fabricate,due to the limit of some traditional fabrication processes.In this paper,the noval fabrication methods and characterization of ultra-thin PIN high energy particles detector are discussed.The results show that 57μm detector with 113 mm² area can be fabricated using TMAH etching.Meanwhile,the test results indicate that ultra-thin PIN detector has good electrical and radiation characterizations.The leakage is in nA scale,which is two times less than that of surface barrier detector.The PIN detector is also characterized using a ²³⁷Am source for resolution and noise calibration.It tells us that the energy resolution of 5.536MeVαsource is about 0.48%-0.56% and electrical noise is 17.55keV.更多还原