【作者】 刘爽； 宁永功； 赵凯生； 刘永智； 李华高； 熊平；

【Author】 LIU Shuang, NING Yong-gong, ZHAO Kai-sheng ,LIU Yong-zhi, LI Hua-gao, XIONG Ping( School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,CHN; Chongqing Optoelectronics Research Institute,Chongqing 400060,CRN)

【机构】 电子科技大学光电信息学院； 重庆光电技术研究所；

【摘要】 用反应溅射法制备了VO_x薄膜。利用XPS分析技术,研究了薄膜组分与氧分压、基片材料、沉积厚度等工艺条件的关系。结果表明本工艺得到V2O5、VO2、V2O3复相膜,氧气流量大和较厚薄膜容易获得高价态V,衬底表面吸附氧会改变薄膜组分,V2O5、VO2含量高的薄膜电阻温度系数相对较高,V2O3不利于红外探测。更多还原

【Abstract】 Thin films of vanadium oxides are prepared by reaction sputtering. The relations of the chemical composition of the film with the oxygen partial pressure, substrates, and the thickness of films are analyzed by XPS. The results show that the prepared films are multi-phase composition consisting of V2O5, VO2 and V2O3 ,and higher valence V is easi ly obtained through increasing the flow rate of O2 and the thickness of the films,but the adsorbed oxygen at substrate surface will change the composition of the films. The measurement of temperature coefficient of resistance (TCR) shows that the higher concentration of V2O5 and VO2 in the films have higher TCR,while the appearance of V2O3 will decrease the TCR of the films.更多还原