【作者】 王祖军； 唐本奇； 张勇； 肖志刚； 黄绍艳；

【Author】 WANG Zu-jun, TANG Ben-qi, ZHANG Yong, XIAO Zhi-gang, HUANG Shao-yan (Northwest Institute of Nuclear Technology,Xi’an 710024,CHN)

【机构】 西北核技术研究所；

【摘要】 运用半导体器件二维数值模拟软件MEDICl,分别对能量为1 MeV和14 MeV的中子,在注量范围为3×1013～5×1014 cm-2辐照下,对CCD器件电荷转移效率的变化规律进行数值模拟研究。建立了MEDICI软件模拟CCD电荷转移效率变化的器件物理模型、中子辐照模型,并对模拟结果进行了机理分析,得出中子辐照诱导CCD器件电荷转移效率降低的初步规律。更多还原

【Abstract】 By using two-dimensional device simuation software MEDICI, the variable regularity of charge transfer efficiency (CTE) for charge couled device(CCD) is simulated under the conditions that CCD is irradiated by neutron beam with the energies of 1 MeV and 14 MeV, respectively,and in dose range of 3× 1013 -5 × 1014 cm-2. The device physics and neutron irradiation models are established to simulate CTE of CCD by MEDICI software. The mechanism of simulation result is analyzed, and the preliminary regularity of CTE reduction for CCD irradiated by neutron beam.更多还原