【作者】 陈二柱； 唐成伟； 江美玲； 梁平治；

【Author】 CHEN Er-zhu, TANG Cheng-wei, JIANG Mei-ling, LIANG Ping-zhi (Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, CHN)

【机构】 中国科学院上海技术物理研究所；

【摘要】 应用标准CMOS工艺,同时结合体硅微机械加工技术,研制成功横向多晶硅p+p-n+微测辐射热计单元;基于研制成功的微测辐射热计,设计了规模为128×128面阵的非致冷红外焦平面。采用标准CMOS工艺制作横向多晶硅p+p-n+结热敏响应元和读出电路;在CMOS工艺完成后,辅以与CMOS工艺兼容的体硅微机械加工工艺,制备微桥形式的热绝缘结构,从而方便地实现了CMOS读出电路与探测器阵列的单片集成。在3～5μm红外波段,微测辐射热计的电压响应率为5.7×103V/W,黑体探测率D*为1.2×108cm·Hz1/2·W-1。焦平面采用行读出模式的结构,信号读出采用栅调制积分电路,输出级采用外接负载电阻的源极跟随电路,将探测器单元产生的信号按顺序串行单端输出。更多还原

【Abstract】 By using standard CMOS processes and bulk micromaching technology, a uncooled infrared microbolometer detector was developed based on the temperature character of the lateral polysilicon p+p- n+ junction, and the 128 × 128 uncooled infrared focal plane arrays was designed. The lateral polysilicon p+ p- n+ junction and readout circuits are fabricated based on the standard CMOS processes. After finished the CMOS process, to realize the monolithic integration of CMOS readout circuits with detector arrays, the thermally insulated microbridge structure could be formed by front-end etching of the substrate using TMAH solution compatible with CMOS process. The responsivity and detectivity (D* ) of the microbolometer are 5. 7× 103 V/W and 1. 2×108 cm · Hz1/2 W-1 in 3-5 μm IR wavelength region, respectively. The columnwise readout architecture and gate modulation integrator were applied in the design of the 128× 128 microbolometer arrays. The signals generated from microbolometers are outputted serially with source followers.更多还原