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氧、氩分压对直流反应溅射制备ZAO薄膜的性能影响
Oxygen, Argon partial pressure dependence of ZAO thin films prepared by DC reactive sputtering
【Author】 LU Feng1,XU Cheng-hai2,WEN Li-shi3,Wu Yu-hou1(1.School of Transportation and Mechanical Engineering Shenyang Jianzhu Uinversity,110168;China 2.School of Mechanical Engineering & Automation Northeastern University,110004;China 3.Institute of Metal Research The Chinese Academy of Sciences,110015;China)
【机构】 沈阳建筑大学交通与机械工程学院； 东北大学机械工程与自动化学院； 中国科学院金属研究所；
【摘要】 采用直流反应磁控溅射技术,制备获得ZAO薄膜,研究氧分压、氩分压关键制备工艺参数对ZAO薄膜的组织结构、光、电性能的影响,并获得了最佳的氧、氩分压制备参数,利用该参数制备ZAO薄膜,能够获得在可见光范围内的平均透射率>85%,最低电阻率为4.5×10-4Ωcm的ZAO薄膜,其光电性能均满足应用需求。
【Abstract】 ZAO film was prepared by DC reactive magnetron sputtering.Oxygen partial pressure and argon partial pressure is the key process parameters.In this paper,the influences of oxygen partial pressure and argon partial pressure on resistivity,transparency and microstructure were investigated.The optimal prepared parameters about oxygen,argon partial pressure was obtained.The high performance ZAO film with resistivity of 4.5×10-4 ?cm and average optical transmittance over 85% within visible light,was successfully achieved using the optimal parameters.The optical and electric properties are to meet the application requirements.
【Key words】 ZAO films； DC reactive sputtering； Oxygen partial pressure； Argon partial pressure；
- 【会议录名称】 第九届全国光电技术学术交流会论文集（上册）
- 【会议名称】第九届全国光电技术学术交流会
- 【会议时间】2010-05-29
- 【会议地点】中国北京
- 【分类号】O484.1
- 【主办单位】中国航天科工集团公司