【作者】 张欣； 黄辉； 黄永清； 周守利； 张帅； 陶彦耘； 任晓敏；

【Author】 ZHANG Xin,HUANG Hui,HUANG Yong-qing,ZHOU Shou-li,ZHANG Shuai,TAO Yan-yun,REN Xiao-min(Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Ministry of Education,Beijing 100876,China)

【机构】 北京邮电大学信息光子学与光通信教育部重点实验室；

【摘要】 通过采用高频小信号Π型等效模型,研究了电路元件参数对异质结双极晶体管(HBT)高频特性的影响。理论探讨了HBT的频率特性,并对实验室制备的InP基HBT外延片结构进行了频率特性分析。通过PSPICE软件,进行了HBT高频小信号等效电路模型和光接收机前端跨阻放大电路的设计和模拟仿真,达到了优化频率特性的目的。基于偏压、跨阻和负载三个因素对HBT的增益与带宽变化特性的影响,提出了改善频率特性的方案。依据具体情况选择可以更好地满足实际中对增益和带宽的需求。更多还原

【Abstract】 High-frequency small-signal Π equivalent model can be used to discuss the impact of circuit element parameters on high-frequency characteristics of heterojunction bipolar transistor(HBT).The theory of of HBT’s frequency characteristics was introduced.Frequency characteristics of InP-based HBT fabricated in our lab was analyzed.The PSPICE design and simulation of the HBT high-frequency small-signal equivalent circuit and of the photoreceiver front-end transimpedance amplifier circuit was carried out for optimization.The three parameters(bias,transimpedance and load) impacting on the characteristics of gain and bandwidth were discussed.The method to improve the frequency characteristics is proposed and can meet the practical needs of the gain and bandwidth.更多还原