【作者】 李娟； 莫晓亮； 孙大林； 陈国荣；

【Author】 Li Juan,Mo Xiaoliang,Sun Dalin,Chen Guorong~* (Department of Materials Science,Fudan University,Shanghai 200433,P.R.China)

【机构】 复旦大学材料科学系；

【摘要】 本文采用单步电沉积法和两步电沉积法在Mo基底上制备CuInS₂薄膜,用X射线衍射仪（XRD）和扫描电子显微镜（SEM）表征了样品的结构和形貌,用能量散射仪（EDX）测试了样品中各元素含量。结果表明,电沉积法制备的样品,元素原子比与沉积电位密切相关;单步法制备的薄膜样品,致密平整,晶粒大小1～2μm,CuInS₂晶体呈黄铜矿结构,同时含有CuS晶体;两步法制备的CuInS₂薄膜为黄铜矿结构,无杂相,但薄膜的致密平整性不如单步法。更多还原

【Abstract】 The ternary chalcopyrite copper indium disulfide（CuInS₂） films were prepared by one-step electrodeposition and two-step electrodeposition techniques on molybdenum substrates.The structure and morphology of the samples were characterized by X-ray diffraction（XRD） and scanning electron microscope（SEM） respectively,while the element compositions were estimated by energy dispersive X-ray microanalysis（EDX）.The results showed that the ingredients of samples were closely related to the deposition potential.The prepared CuInS₂ thin films by one-step electrodeposition were found to be compact and uniform,with grain size about 1 to 2μm, containing CuS phase.And the CuInS₂ thin films prepared by two-step electrodeposition were pure without other phases;however,the films were not as compact and uniform as those by one-step electrodeposition.更多还原