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等离子辅助磁控溅射陶瓷薄膜阻隔机理的研究(英文)

The Barrier Mechanism Research of The Ceramic Thin Film by Plasma Auxiliary Magnetron Sputtering

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【作者】 刘壮林晶孙智慧

【Author】 LIU Zhuang~1 LIN Jing~1 SUN Zhi-Hui~1 (1.Harbin University of Commerce,Harbin 150028,China)

【机构】 哈尔滨商业大学

【摘要】 研究了PET基体表面等离子辅助磁控溅射陶瓷薄膜(SiOx)阻隔性提高的机理,SEM形貌表明:磁控溅射SiOx层存在层状结构及针孔随机分布,阻隔性的提高可由努森扩散和层流两种机理加以解释,在一定的压力差下,阻隔性提高决定于针孔的分布、陶瓷层厚度以及SiOx层数。

【Abstract】 SiO_x films were deposited on the PET surface which enhances its barrier by plasma auxiliary magnetron sputtering in this article,and the mechanism of the barrier enhancement was researched,the supposition and the theoretical analysis to the SiO_x films depositional appearance were made.At the same time, there are laminated structures,the random and distributional pinholes under the SEM appearance,which indicate the barrier enhancement may explained by Knudsen diffusion and Poiseuille flow,namely under certain pressure difference,the impediment enhancement decided by the pinhole distribution,ceramic level thickness as well as the quantities of SiO_x layers.

  • 【会议录名称】 真空技术与表面工程——第九届真空冶金与表面工程学术会议论文集
  • 【会议名称】第九届真空冶金与表面工程学术会议
  • 【会议时间】2009-08-24
  • 【会议地点】中国辽宁沈阳
  • 【分类号】TB383.2
  • 【主办单位】中国真空学会真空冶金专业委员会、沈阳市真空学会
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