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射频磁控溅射法制备Cd1-xZnxTe薄膜

Cd1-xZnxTe alloy films grown by r.f.sputtering

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【作者】 曾冬梅周海孙金池杨英歌冯文然万汉城卢一民

【Author】 ZENG Dong-mei~1 ZHOU Hai~1 SUN Jin-chi~2 YANG Ying-ge~1 FENG Wen-ran~1 WAN Han-cheng~1 LU Yi-ming~1 (1 Department of Materials Science and Engineering,Beijing Institute of Petrochemical Technology, Beijing 102617,China;2 Beijing Microelectronic Technology Institute,Beijing 100076,China)

【机构】 北京石油化工学院材料科学与工程系北京微电子技术研究所

【摘要】 选择改进布里奇曼法生长的Cd0.9Zn0.1Te晶体为靶材,采用射频磁控溅射法在玻璃衬底上沉积了禁带宽度为1.6~1.7 eV的Cd1-xZnxTe多晶薄膜。通过X射线衍射、EDX能谱、台阶仪、原子力显微镜和紫外分光光度计的测试和分析,比较了不同衬底温度对磁控溅射法制备Cd1-xZnxTe多晶薄膜光学和结构性能的影响。实验表明:Cd1-xZnxTe多晶薄膜的结晶质量和晶粒尺寸随着溅射温度的升高而升高,而薄膜的吸收系数曲线随着溅射温度的升高而下降。

【Abstract】 Cd1-xZnxTe alloy films with 1.6 and 1.7 eV band gaps were deposited on glass as the absorbed layer in solar cells by RF magnetron sputtering from Cd0.9Zn0.1Te crystals target grown by the Modified Vertical Bridgman method.High-quality polycrystalline films were obtained.The influences of the deposition temperature on polycrystalline Cd1-xZnxTe films have been studied using X-ray diffraction(XRD),energy dispersive X-ray(EDX),step profilometer,atomic force microscopy(AFM) and ultraviolet spectrophotometer. We found that the degree of crystallinity and the grain size of the deposited films changed regularly with the increase of deposition temperatures.The optical absorption coefficientαdecreased monotonically with the increase of deposition temperature.

【基金】 supported by Sate Key Laboratory of Solidification Processing and School of Materials Science and Engineering,Northwestern Polytechnical University,Xi’ an.China.
  • 【会议录名称】 第九届真空冶金与表面工程学术会议论文摘要集
  • 【会议名称】第九届真空冶金与表面工程学术会议
  • 【会议时间】2009-08-24
  • 【会议地点】中国辽宁沈阳
  • 【分类号】TB383.2
  • 【主办单位】中国真空学会真空冶金专业委员会(Vacuum Metallurgy Committee of Chinese Vacuum Society)、沈阳市真空学会(ShenYang Vacuum Society)
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